W-doped anatase TiO2 films were deposited on glass substrate by magnetron cosputtering. The minimum resistivity, 1.5× 10 -2ω cm, for Ti1-x Wx O2 film (x=0.063) was obtained. X-ray photoelectron spectroscopy analysis shows W incorporated in the Ti lattice position is mostly in the W6+ state. Theoretical calculations based upon the density-functional theory were applied to analyze the electronic structure and conducting mechanism. The strong hybridization of Ti 3d states with W 5d states is the dominate factor to cause the shifting in Fermi level into conduction band. Our results suggest that tungsten is a favorable dopant to form TiO2 -based transparent conducting oxide materials.
ASJC Scopus subject areas