Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

Tetsuya Mizumoto, Hideki Yokoi, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

研究成果: Conference article査読

抄録

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O2 plasma activation process with a subsequent dip in water. The wafer exposed to O2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O2 plasma activated GaInAsP and garnet crystals.

本文言語English
ページ(範囲)503-504
ページ数2
ジャーナルConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
2
出版ステータスPublished - 1999 12 1
外部発表はい
イベントProceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA
継続期間: 1999 11 81999 11 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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