GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O2 plasma activation process with a subsequent dip in water. The wafer exposed to O2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O2 plasma activated GaInAsP and garnet crystals.
|ジャーナル||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|出版ステータス||Published - 1999 12月 1|
|イベント||Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA|
継続期間: 1999 11月 8 → 1999 11月 11
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