What is the essence of vFB shifts in high-k gate stack?

Toshihide Nabatame, Kunihiko Iwamoto, Koji Akiyama, Yu Nunoshige, Hiroyuki Ota, Tomoji Ohishi, Akira Toriumi

研究成果: Conference contribution

11 被引用数 (Scopus)

抄録

Several origins for VFB shift have so far been discussed about metal/high-k/SiO2/Si structures and we focus on three topics such as bottom interface dipole at the high-k/interfacial layer (IL)-SiO2 interface, charge or dipole of bottom reaction layer in IL-SiO2, and dipole due to oxygen vacancy (Vo) in high-k layer by separating each type of these dipoles. We employed bi-layer high-k dielectrics such as HfO 2/Al2O3/SiO2 and Al 2O3/HfO2/SiO2 and demonstrated that the bottom interface dipole plays a critical role in determining the V FB shifts We also show that VFB roll-off behavior in thinner EOT region can be associated with charge or dipole of the bottom reaction layer induced by re-oxidation at the IL-SiO2/Si interface. Finally, we show that Vo in HfO2 and Al2O3 dielectrics generated by HfxRu1-x alloy gates induces dipole at the high-k/IL-SiO2 bottom interface

本文言語English
ホスト出版物のタイトルECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
ページ543-555
ページ数13
4
DOI
出版ステータスPublished - 2007 12 1
イベント5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
継続期間: 2007 10 82007 10 10

出版物シリーズ

名前ECS Transactions
番号4
11
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

Conference5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • Engineering(all)

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