Why are hydrogen ions best for MeV ion beam lithography?

Rattanaporn Norarat, Nitipon Puttaraksa, Mari Napari, A. R. Ananda Sagari, Mikko Laitinen, Timo Sajavaara, Peerapong Yotprayoonsak, Mika Pettersson, Orapin Chienthavorn, Harry J. Whitlow

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The exposure characteristics of poly-(methyl methacrylate) (PMMA) for 2 MeV 1H +, 3 MeV 4He 2+ and 6 MeV 12C 3+ have been investigated. The samples were characterised using Atomic Force Microscopy (AFM), optical microscopy and Raman spectroscopy. Development was carried out using a 7:3 propan-2-ol:H 2O mixture to determine clearing and cross-linking fluences. It was found that protons had a considerably wider tolerance to exposure variations and a smaller span of doses within the ion track. Furthermore, the void formation and consequent stress-induced surface roughening were smaller for protons. For all ions, the CC bond Raman signal increased continuously with dose and fluence, even well above that required for total cross linking.

本文言語English
ページ(範囲)22-24
ページ数3
ジャーナルMicroelectronic Engineering
102
DOI
出版ステータスPublished - 2013 2月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

フィンガープリント

「Why are hydrogen ions best for MeV ion beam lithography?」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル