X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

    研究成果: Paper

    2 引用 (Scopus)

    抜粋

    The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

    元の言語English
    ページ289-292
    ページ数4
    出版物ステータスPublished - 1998 1 1
    イベントProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA
    継続期間: 1998 6 71998 6 11

    Other

    OtherProceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
    Baltimore, MD, USA
    期間98/6/798/6/11

      フィンガープリント

    ASJC Scopus subject areas

    • Engineering(all)

    これを引用

    Toyoda, I., Nishikawa, K., Kamogawa, K., Yamaguchi, C., Hirano, M., Onodera, K., & Tokumitsu, T. (1998). X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. 289-292. 論文発表場所 Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Baltimore, MD, USA, .