X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda; Kenjiro Nishikawa; Kenji Kamogawa; Chikara Yamaguchi; Makoto Hirano; Kiyomitsu Onodera; Tsuneo Tokumitsu

X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

研究成果: Paper › 査読

2 被引用数 (Scopus)

抄録

The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

本文言語	English
ページ	289-292
ページ数	4
出版ステータス	Published - 1998 1月 1
イベント	Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA 継続期間: 1998 6月 7 → 1998 6月 11

Other

Other	Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
City	Baltimore, MD, USA
Period	98/6/7 → 98/6/11

ASJC Scopus subject areas

工学（全般）

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引用スタイル

X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. / Toyoda, Ichihiko; Nishikawa, Kenjiro; Kamogawa, Kenji; Yamaguchi, Chikara; Hirano, Makoto; Onodera, Kiyomitsu; Tokumitsu, Tsuneo.

1998. 289-292 Paper presented at Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Baltimore, MD, USA.

研究成果: Paper › 査読

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AB - The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

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X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

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Other

ASJC Scopus subject areas

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