抄録
The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers |
| 出版場所 | Piscataway, NJ, United States |
| 出版者 | IEEE |
| ページ | 289-292 |
| ページ数 | 4 |
| 出版物ステータス | Published - 1998 |
| 外部発表 | Yes |
| イベント | Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA 継続期間: 1998 6 7 → 1998 6 11 |
Other
| Other | Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium |
|---|---|
| 市 | Baltimore, MD, USA |
| 期間 | 98/6/7 → 98/6/11 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Media Technology
これを引用
X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. / Toyoda, Ichihiko; Nishikawa, Kenjiro; Kamogawa, Kenji; Yamaguchi, Chikara; Hirano, Makoto; Onodera, Kiyomitsu; Tokumitsu, Tsuneo.
IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. Piscataway, NJ, United States : IEEE, 1998. p. 289-292.研究成果: Conference contribution
}
TY - GEN
T1 - X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology
AU - Toyoda, Ichihiko
AU - Nishikawa, Kenjiro
AU - Kamogawa, Kenji
AU - Yamaguchi, Chikara
AU - Hirano, Makoto
AU - Onodera, Kiyomitsu
AU - Tokumitsu, Tsuneo
PY - 1998
Y1 - 1998
N2 - The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.
AB - The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.
UR - http://www.scopus.com/inward/record.url?scp=0031624821&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031624821&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0031624821
SP - 289
EP - 292
BT - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
PB - IEEE
CY - Piscataway, NJ, United States
ER -