抜粋
The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.
| 元の言語 | English |
|---|---|
| ページ | 289-292 |
| ページ数 | 4 |
| 出版物ステータス | Published - 1998 1 1 |
| イベント | Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA 継続期間: 1998 6 7 → 1998 6 11 |
Other
| Other | Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium |
|---|---|
| 市 | Baltimore, MD, USA |
| 期間 | 98/6/7 → 98/6/11 |
フィンガープリント
ASJC Scopus subject areas
- Engineering(all)
これを引用
Toyoda, I., Nishikawa, K., Kamogawa, K., Yamaguchi, C., Hirano, M., Onodera, K., & Tokumitsu, T. (1998). X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. 289-292. 論文発表場所 Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Baltimore, MD, USA, .