X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda; Kenjiro Nishikawa; Kenji Kamogawa; Chikara Yamaguchi; Makoto Hirano; Kiyomitsu Onodera; Tsuneo Tokumitsu

X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

研究成果: Paper › 査読

2 被引用数 (Scopus)

抄録

The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

本文言語	English
ページ	289-292
ページ数	4
出版ステータス	Published - 1998 1月 1
イベント	Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA 継続期間: 1998 6月 7 → 1998 6月 11

Other

Other	Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
City	Baltimore, MD, USA
Period	98/6/7 → 98/6/11

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

引用スタイル

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abstract = "The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.",

author = "Ichihiko Toyoda and Kenjiro Nishikawa and Kenji Kamogawa and Chikara Yamaguchi and Makoto Hirano and Kiyomitsu Onodera and Tsuneo Tokumitsu",

year = "1998",

month = jan,

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pages = "289--292",

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AU - Toyoda, Ichihiko

AU - Nishikawa, Kenjiro

AU - Kamogawa, Kenji

AU - Yamaguchi, Chikara

AU - Hirano, Makoto

AU - Onodera, Kiyomitsu

AU - Tokumitsu, Tsuneo

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

AB - The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

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T2 - Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

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ER -

X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

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