X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

研究成果: Conference contribution

抄録

The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

本文言語English
ホスト出版物のタイトルIEEE MTT-S International Microwave Symposium Digest
編集者R. Meixner
出版社IEEE
ページ337-340
ページ数4
1
出版ステータスPublished - 1998
外部発表はい
イベントProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA
継続期間: 1998 6 71998 6 12

Other

OtherProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)
CityBaltimore, MD, USA
Period98/6/798/6/12

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 凝縮系物理学

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