X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

研究成果: Conference contribution

抜粋

The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

元の言語English
ホスト出版物のタイトルIEEE MTT-S International Microwave Symposium Digest
編集者R. Meixner
出版者IEEE
ページ337-340
ページ数4
1
出版物ステータスPublished - 1998
外部発表Yes
イベントProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA
継続期間: 1998 6 71998 6 12

Other

OtherProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)
Baltimore, MD, USA
期間98/6/798/6/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • これを引用

    Toyoda, I., Nishikawa, K., Kamogawa, K., Yamaguchi, C., Hirano, M., Onodera, K., & Tokumitsu, T. (1998). X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. : R. Meixner (版), IEEE MTT-S International Microwave Symposium Digest (巻 1, pp. 337-340). IEEE.