X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda; Kenjiro Nishikawa; Kenji Kamogawa; Chikara Yamaguchi; Makoto Hirano; Kiyomitsu Onodera; Tsuneo Tokumitsu

X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

Ichihiko Toyoda, Kenjiro Nishikawa, Kenji Kamogawa, Chikara Yamaguchi, Makoto Hirano, Kiyomitsu Onodera, Tsuneo Tokumitsu

研究成果: Conference contribution

抄録

The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

本文言語	English
ホスト出版物のタイトル	IEEE MTT-S International Microwave Symposium Digest
編集者	R. Meixner
出版社	IEEE
ページ	337-340
ページ数	4
巻	1
出版ステータス	Published - 1998
外部発表	はい
イベント	Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA 継続期間: 1998 6月 7 → 1998 6月 12

Other

Other	Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)
City	Baltimore, MD, USA
Period	98/6/7 → 98/6/12

ASJC Scopus subject areas

電子工学および電気工学
凝縮系物理学

他のファイルとリンク

引用スタイル

Toyoda, I, Nishikawa, K, Kamogawa, K, Yamaguchi, C, Hirano, M, Onodera, K & Tokumitsu, T 1998, X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology. in R Meixner (ed.), IEEE MTT-S International Microwave Symposium Digest. vol. 1, IEEE, pp. 337-340, Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3), Baltimore, MD, USA, 98/6/7.

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abstract = "The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.",

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AU - Hirano, Makoto

AU - Onodera, Kiyomitsu

AU - Tokumitsu, Tsuneo

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AB - The three-dimensional (3-D) MMIC technology significantly improves the operating frequency of Si MMICs and offers highly integrated masterslice MMICs. This paper introduces a newly developed X-band Si bipolar transistor transceiver MMIC which integrates 13 function blocks on a 2.3×2.3 mm chip; it offers 20 dB receiver gain and 13 dB transmitter gain. Its design uses a novel function-block-library concept based on the 3-D masterslice MMIC technology.

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M3 - Conference contribution

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BT - IEEE MTT-S International Microwave Symposium Digest

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T2 - Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 7 June 1998 through 12 June 1998

ER -

X-band Si bipolar transistor single-chip transceiver using three-dimensional MMIC technology

抄録

Other

ASJC Scopus subject areas

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